Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Fully Integrated CMOS Power Amplifier

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

Low Power Amplifier Design Using CMOS Active Inductor

In this paper, a CMOS low power amplifier based on a high-quality active inductor and implemented by using 0.25-μm 1P5M CMOS standard technology is presented. The amplifier achieves power gain (S21) of 18dB within the -3dB cutoff frequency, bandwidth of 1.3GHz, and power consumption of 18mW under 2.5V power supply in 188 × 174μm silicon area. The input third-order intercept point (IIP3) and the...

Design of fully-integrated digitally-controlled CMOS voltage amplifier

Design of fully-integrated digitallycontrolled CMOS voltage amplifier Joon Huang Chuah & David Holburn a Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK b Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia Accepted author version posted online: 31 Jan 2014.Published online: 2...

Wideband CMOS Transimpedance Amplifier Design Using Transformer-Peaking Technique